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Highly robust flexible igzo tfts and integrated circuits
- Kim, K.-T.;
- Kang, S.-H.;
- Cho, S.-S.;
- Park, H.-B.;
- Jo, J.-W.;
- ... Park, Sung Kyu
Citations
SCOPUS
1초록
We investigated amorphous metal-oxide semiconductor based electronics for flexible and stretchable applications. In particular, we demonstrated a-IGZO and SWCNT hybrid flexible amplifiers on PI substrate. Also, mesa structured a-IGZO TFTs showed stable electrical operation under 125 μm bending radius up to 10000 cycles, enabling ultra-flexible 7-stage ring oscillator circuit. © 2021 SID.
키워드
A-IGZO TFTs; Flexible and stretchable electronics; Neutral layer; Poisson effect; Stress relaxation; Integrated circuits; Metals; MOS devices; Oxide semiconductors; Semiconducting indium compounds; Thin film transistors; Timing circuits; Amorphous metals; Bending radius; Igzo tfts; Ring oscillator circuits; Flexible electronics
- 제목
- Highly robust flexible igzo tfts and integrated circuits
- 저자
- Kim, K.-T.; Kang, S.-H.; Cho, S.-S.; Park, H.-B.; Jo, J.-W.; Park, Sung Kyu
- 발행일
- 2021-05
- 유형
- Conference Paper
- 권
- 52
- 호
- 1
- 페이지
- 17 ~ 20