Highly robust flexible igzo tfts and integrated circuits

  • Kim, K.-T.; 
  • Kang, S.-H.; 
  • Cho, S.-S.; 
  • Park, H.-B.; 
  • Jo, J.-W.; 
  • ... Park, Sung Kyu
Citations

SCOPUS

1

초록

We investigated amorphous metal-oxide semiconductor based electronics for flexible and stretchable applications. In particular, we demonstrated a-IGZO and SWCNT hybrid flexible amplifiers on PI substrate. Also, mesa structured a-IGZO TFTs showed stable electrical operation under 125 μm bending radius up to 10000 cycles, enabling ultra-flexible 7-stage ring oscillator circuit. © 2021 SID.

키워드

A-IGZO TFTs; Flexible and stretchable electronics; Neutral layer; Poisson effect; Stress relaxation; Integrated circuits; Metals; MOS devices; Oxide semiconductors; Semiconducting indium compounds; Thin film transistors; Timing circuits; Amorphous metals; Bending radius; Igzo tfts; Ring oscillator circuits; Flexible electronics
제목
Highly robust flexible igzo tfts and integrated circuits
저자
Kim, K.-T.; Kang, S.-H.; Cho, S.-S.; Park, H.-B.; Jo, J.-W.; Park, Sung Kyu
DOI
10.1002/sdtp.14599
발행일
2021-05
유형
Conference Paper
저널명
Digest of Technical Papers - SID International Symposium
권
52
호
1
페이지
17 ~ 20