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Comparative study in response time between a current-mode and a voltage-mode sense amplifier for resistive loads in MRAM
- Yu, H.-S.;
- Lim, J.-C.;
- Kim, S.-W.;
- Kim, I.-M.;
- Kim, S.-J.;
- ... Song, S.-H.
Citations
SCOPUS
1초록
We comparatively study the response times of a current-mode and a voltage-mode sense amplifier for the resistive loads used in MRAM. In order to limit the applied voltage below a critical value of 0.4V across the resistors, sense amplifiers with separate input/output nodes are selected. A systematic simulation study for the resistive load variations in range of 0.5 kΩ to 8.5kΩ using a 0.35μm-CMOS technology shows that the current-mode sense amplifier shows superior response time of at least 1.3nsec over the voltage-mode sense amplifier.
키워드
Current mode; MRAM; Sense amplifier; Amplifiers (electronic); CMOS integrated circuits; Computer simulation; Electric load management; Electric potential; Magnetoresistance; Random access storage; Resistors; Current mode; Magnetic tunnel juction (MTJ); Magneto-resistive random access memories (MRAM); Sense amplifiers; Electric currents
- 제목
- Comparative study in response time between a current-mode and a voltage-mode sense amplifier for resistive loads in MRAM
- 저자
- Yu, H.-S.; Lim, J.-C.; Kim, S.-W.; Kim, I.-M.; Kim, S.-J.; Song, S.-H.
- 발행일
- 2004-06
- 유형
- Conference Paper
- 저널명
- 2004 International Conference on Communications, Circuits and Systems
- 권
- 2
- 페이지
- 1179 ~ 1182
- 언어
- ENG
- 분량
- 4 페이지
- ISSN
- P 0000-0000