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Oxide Double-Layer Nanocrossbar for Ultrahigh-Density Bipolar Resistive Memory
- Chang, Seo Hyoung;
- Lee, Shin Buhm;
- Jeon, Dae Young;
- Park, So Jung;
- Kim, Gyu Tae;
- 외 6명
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119초록
A TiO2/VO2 oxide double-layer nanocrossbar to overcome the sneak path problem in bipolar resistive memory is proposed. TiO2 and VO2 thin films function as a bipolar resistive memory and a bidirectional switch, respectively. The new structure suggests that ultrahigh densities can be achieved with a 2D nanocrossbar array layout. By stacking into a 3D structure, the density can be even higher.
키워드
crossbar architecture; nanodevices; resistance switching; sneak path problem; titanium dioxide; NONVOLATILE; SWITCHES; DIODE
- 제목
- Oxide Double-Layer Nanocrossbar for Ultrahigh-Density Bipolar Resistive Memory
- 저자
- Chang, Seo Hyoung; Lee, Shin Buhm; Jeon, Dae Young; Park, So Jung; Kim, Gyu Tae; Yang, Sang Mo; Chae, Seung Chul; Yoo, Hyang Keun; Kang, Bo Soo; Lee, Myoung-Jae; Noh, Tae Won
- 발행일
- 2011-09
- 유형
- Article
- 권
- 23
- 호
- 35
- 페이지
- 4063 ~ 4067
- 언어
- ENG
- 출판사
- WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
- 발행국가
- 독일
- 분량
- 5 페이지
- ISSN
- E 1521-4095
P 0935-9648