Microstructural Evolution of Cu Thin Film on the Nano-Thin TaNx/Oxygen Stuffed TaNx Structure

초록

Oxygen stuffed nano-thin ionized physical vapor deposition TaNx film before deposition of the ionized physical vapor deposition Cu film results in significantly higher thermal resistance to reactions between Cu and Si. Random orientation of the Cu film formed on the oxygen-stuffed TaNx could be avoided by depositing another TaNx on the oxygen-stuffed TaNx films before Cu deposition. This was confirmed by X-ray diffraction pole figure technique for the electroplated Cu damascene line arrays.

키워드