Theoretical studies of plasma ion implantation

초록

Plasma ion implantation is studied using a kinetic PIC (particle-in-cell) simulation method for a bounded plasma system, allowing an external circuit as in laboratory experiments. It predicts the kinetic properties which are inaccessible with the fluid approach. The applied voltage magnitude and frequency depend on the application area, tool hardening, or electronic material processing. By using a rather modest computing facility (PC-80386 or VAX-8800), the average and peak currents are calculated together with the sheath size and the implanted ion energy distribution. These results compare well with other analytic and fluid calculations.