Spray-coated single walled carbon nanotubes as source and drain electrodes in SnO thin-film transistors

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초록

In this letter, spray-coated single walled carbon nanotubes (SWNTs) as one of alternative electrodes in SnO thin-film transistors are demonstrated for emerging electronic applications. Herein, the device architecture of SnO TFTs with a polymer etch stop layer (SU-8) enables the selective etching of SWNTs in a desired region without the detrimental effects of SnO channel layers. Moreover, SnO TFTs with SWNT electrodes as substitutes successfully demonstrate decent width normalized electrical contact properties (similar to 1.49 k Omega cm), field effect mobility (similar to 0.69 cm(2) V-1 s(-1)), sub-threshold slope (similar to 0.4 V dec(-1)), and current on-off ratio (I-on/I-off similar to 3.5 x 10(3)). Systematic temperature dependency measurements elucidate that SnO channel transports with an activation energy within several tens of meV, together with decent contact resistance as compared to that of conventional Ni electrodes.

키워드

SnO TFTs; nanowire structures; SWNT electronics; electrical contacts; band tail states; sensing mechanism; GALLIUM-ZINC-OXIDE; RESISTANCE; MOSFETS; PHASE
제목
Spray-coated single walled carbon nanotubes as source and drain electrodes in SnO thin-film transistors
저자
Ryu, Jae Hyeon; Baek, Geun-Woo; Kim, Seung Yeob; Kwon, Hyuck-In; Jin, Sung Hun
DOI
10.1088/1361-6641/aac675
발행일
2018-07
유형
Article
저널명
Semiconductor Science and Technology
권
33
호
7