Investigation on trap density depending on Si ratio in amorphous SiZnSnO thin-film transistors

Lee, B.H.; Hong, S.-Y.; Kim, D.-H.; Kim, S.; Kwon, Hyuck-In; Lee, S.Y.

doi:10.1016/j.physb.2019.08.006

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Investigation on trap density depending on Si ratio in amorphous SiZnSnO thin-film transistors

Lee, B.H.;
Hong, S.-Y.;
Kim, D.-H.;
Kim, S.;
Kwon, Hyuck-In;
외 1명

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8

초록

High-performance amorphous SiZnSnO thin-film transistors (a-SZTO TFTs) were fabricated using radio-frequency (RF) magnetron sputtering. The noise spectral density of a-SZTO TFTs measured by using the drain current has been reported, and it was found that is possible to apply the conventional 1/fa theory to the low-frequency noise (LFN) of the a-SZTO TFTs. The LFN characteristics of a-SZTO TFTs can be clearly identified by the correlated number fluctuation-mobility fluctuation model. Based on the noise properties, the interfacial trap density (NT) was decreased from 2.32 × 1019 to 1.33 × 1019 cm−3 eV−1 as increasing Si ratio in a-SZTO TFTs. The electrical characteristics and LFN properties of a-SZTO TFTs varied strongly depending on the Si ratio, mainly because the Si atom can act as an oxygen vacancy suppressor.

키워드

Amorphous oxide semiconductor; Low-frequency noise; Silicon zinc tin oxide; Thin film transistor; Amorphous silicon; Drain current; Magnetron sputtering; Oxide semiconductors; Silicon compounds; Spectral density; Thermal noise; Thin film circuits; Thin films; Tin oxides; Amorphous oxide semiconductor (AOS); Electrical characteristic; Interfacial trap densities; Low-Frequency Noise; Mobility fluctuations; Noise spectral density; Radio frequency magnetron sputtering; Zinc tin oxide; Thin film transistors

제목: Investigation on trap density depending on Si ratio in amorphous SiZnSnO thin-film transistors

저자: Lee, B.H.; Hong, S.-Y.; Kim, D.-H.; Kim, S.; Kwon, Hyuck-In; Lee, S.Y.

DOI: 10.1016/j.physb.2019.08.006

발행일: 2019-12

유형: Article

저널명: Physica B: Condensed Matter

권: 574