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Investigation on trap density depending on Si ratio in amorphous SiZnSnO thin-film transistors
- Lee, B.H.;
- Hong, S.-Y.;
- Kim, D.-H.;
- Kim, S.;
- Kwon, Hyuck-In;
- 외 1명
WEB OF SCIENCE
7SCOPUS
8초록
High-performance amorphous SiZnSnO thin-film transistors (a-SZTO TFTs) were fabricated using radio-frequency (RF) magnetron sputtering. The noise spectral density of a-SZTO TFTs measured by using the drain current has been reported, and it was found that is possible to apply the conventional 1/fa theory to the low-frequency noise (LFN) of the a-SZTO TFTs. The LFN characteristics of a-SZTO TFTs can be clearly identified by the correlated number fluctuation-mobility fluctuation model. Based on the noise properties, the interfacial trap density (NT) was decreased from 2.32 × 1019 to 1.33 × 1019 cm−3 eV−1 as increasing Si ratio in a-SZTO TFTs. The electrical characteristics and LFN properties of a-SZTO TFTs varied strongly depending on the Si ratio, mainly because the Si atom can act as an oxygen vacancy suppressor.
키워드
- 제목
- Investigation on trap density depending on Si ratio in amorphous SiZnSnO thin-film transistors
- 저자
- Lee, B.H.; Hong, S.-Y.; Kim, D.-H.; Kim, S.; Kwon, Hyuck-In; Lee, S.Y.
- 발행일
- 2019-12
- 유형
- Article
- 권
- 574
- 언어
- ENG
- 출판사
- Elsevier B.V.
- 발행국가
- 네덜란드
- ISSN
- E 1873-2135
P 0921-4526