상세 보기
Optical properties of selectively oxidized vertical cavity laser with depleted optical thyristor structure
- Choi, Woon-Kyung;
- Kim, Doo-Gun;
- Moon, Yon-Tae;
- Choi, Young-Wan;
- Kim, Yong-Kwan;
- 외 3명
Citations
WEB OF SCIENCE
9Citations
SCOPUS
13초록
The authors show that the optical properties of selectively oxidized vertical cavity lasers with a depleted optical thyristor structure have a low threshold current and high sensitivity to input optical light. The oxidized thyristor laser clearly shows a nonlinear s-shaped current-voltage and lasing characteristics. A switching voltage of 5.24 V, a holding voltage of 1.50 V, and a very low threshold current of 0.65 mA are measured, making these devices attractive for optical processing applications. (c) 2006 American Institute of Physics.
키워드
TRANSMISSION ELECTROPHOTONIC DEVICE; OPTOELECTRONIC SWITCH; VOLTAGE; MEMORY
- 제목
- Optical properties of selectively oxidized vertical cavity laser with depleted optical thyristor structure
- 저자
- Choi, Woon-Kyung; Kim, Doo-Gun; Moon, Yon-Tae; Choi, Young-Wan; Kim, Yong-Kwan; Choquette, Kent D.; Lee, Seok; Woo, Deok-Ha
- 발행일
- 2006-09
- 유형
- Article
- 권
- 89
- 호
- 12
- 언어
- ENG
- 출판사
- AMER INST PHYSICS
- 발행국가
- 미국
- ISSN
- E 1077-3118
P 0003-6951