Optical properties of selectively oxidized vertical cavity laser with depleted optical thyristor structure

  • Choi, Woon-Kyung; 
  • Kim, Doo-Gun; 
  • Moon, Yon-Tae; 
  • Choi, Young-Wan; 
  • Kim, Yong-Kwan; 
  • 외 3명
Citations

WEB OF SCIENCE

9
Citations

SCOPUS

13

초록

The authors show that the optical properties of selectively oxidized vertical cavity lasers with a depleted optical thyristor structure have a low threshold current and high sensitivity to input optical light. The oxidized thyristor laser clearly shows a nonlinear s-shaped current-voltage and lasing characteristics. A switching voltage of 5.24 V, a holding voltage of 1.50 V, and a very low threshold current of 0.65 mA are measured, making these devices attractive for optical processing applications. (c) 2006 American Institute of Physics.

키워드

TRANSMISSION ELECTROPHOTONIC DEVICE; OPTOELECTRONIC SWITCH; VOLTAGE; MEMORY
제목
Optical properties of selectively oxidized vertical cavity laser with depleted optical thyristor structure
저자
Choi, Woon-Kyung; Kim, Doo-Gun; Moon, Yon-Tae; Choi, Young-Wan; Kim, Yong-Kwan; Choquette, Kent D.; Lee, Seok; Woo, Deok-Ha
DOI
10.1063/1.2355362
발행일
2006-09
유형
Article
저널명
Applied Physics Letters
권
89
호
12