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Wide frequency switchable microwave resonator by injecting eutectic gallium indium into microfluidic defected ground structure
- Kim, Y.;
- Lim, D.;
- Park, E.;
- Tentzeris, M.M.;
- Lim, Sungjoon
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1초록
This article proposes a frequency switchable microwave resonator based on a microfluidic defected ground structure (m-DGS) that provides wider frequency tuning ratio. Because its resonant frequency is determined from the DGS geometry, the resonant frequency can be switched by injecting EGaIn liquid metal into the m-DGS to decrease the effective inductance and hence increase resonant frequency to 7.7 GHz from 3 GHz, that is, 88% tuning range. The proposed idea is demonstrated numerically and experimentally. © 2019 Wiley Periodicals, Inc.
키워드
defected ground structure; frequency switching; liquid metal; microfluidic channel; resonator; Defects; Gallium; Indium; Liquid metals; Microfluidics; Microwave devices; Microwave resonators; Natural frequencies; Resonators; Frequency switching; Frequency tuning ratio; Microfluidic channel; Switchable; Tuning ranges; Defected ground structures
- 제목
- Wide frequency switchable microwave resonator by injecting eutectic gallium indium into microfluidic defected ground structure
- 저자
- Kim, Y.; Lim, D.; Park, E.; Tentzeris, M.M.; Lim, Sungjoon
- 발행일
- 2019-10
- 유형
- Article
- 권
- 61
- 호
- 10
- 페이지
- 2405 ~ 2409
- 언어
- ENG
- 출판사
- John Wiley and Sons Inc.
- 발행국가
- 미국
- 분량
- 5 페이지
- ISSN
- E 1098-2760
P 0895-2477