Chemical Bond Structure and MOSFET Device Damages of Electron Beam Cured Siloxane Spin-on-dielectric Films

초록

This paper presents the properties of electron beam cured SOG (spin-on-glass) films in terms of the chemical bond structure and accompanying device damages. It is observed that e-beam cured SOG films do not show the Si-CH bonds in the FT-IR. spectra but still have the carbons in the film which are thermally stable. As for the device damage, the experimental result shows that the threshold voltage of nMOSFET decreases by positive charging of gate oxide after e-beam curing process and it shows antenna ratio independence. Also, the variation of threshold voltage is largely affected by the cathode voltage, which determines the electron energy and interlayer dielectric thickness.

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