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Organic electrolyte-gated synaptic transistors with finely tunable 14-bit states based on ion concentration tailoring
- Kim, Donguk;
- Pyo, Won Jun;
- Youn, Sangwook;
- So, Jaehee;
- Kim, Youngseok;
- ... Kim, Felix Sunjoo;
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Organic electrolyte-gated synaptic transistors (OEGSTs) use ion-transport-mediated synaptic plasticity with ultralow energy consumption, making them promising candidates for artificial synapses in computing hardware for artificial neural networks (ANNs). Here, we investigate the role of electrolyte ion concentration in tuning OEGST performance. Hysteresis analysis and impedance spectroscopy reveal a threshold ion concentration that yields the large hysteresis and high capacitance required for optimal OEGST operation. At this optimal concentration, devices exhibit symmetric weight updates and 14-bit states and consume only 4.4 pJ mm(-2) spike(-1) with a fast speed of 500 Hz. We demonstrate the complex ANN computing capability of OEGSTs with recognition accuracies for the MNIST (98.3%) and CIFAR-10 (>70%) datasets.
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- 제목
- Organic electrolyte-gated synaptic transistors with finely tunable 14-bit states based on ion concentration tailoring
- 저자
- Kim, Donguk; Pyo, Won Jun; Youn, Sangwook; So, Jaehee; Kim, Youngseok; Kim, Hyungjin; Kim, Felix Sunjoo
- 발행일
- 2025-12
- 유형
- Article
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- DEVICE
- 권
- 3
- 호
- 12