Organic electrolyte-gated synaptic transistors with finely tunable 14-bit states based on ion concentration tailoring

  • Kim, Donguk
  • Pyo, Won Jun
  • Youn, Sangwook
  • So, Jaehee
  • Kim, Youngseok
  • ... Kim, Felix Sunjoo
  • 외 1명
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초록

Organic electrolyte-gated synaptic transistors (OEGSTs) use ion-transport-mediated synaptic plasticity with ultralow energy consumption, making them promising candidates for artificial synapses in computing hardware for artificial neural networks (ANNs). Here, we investigate the role of electrolyte ion concentration in tuning OEGST performance. Hysteresis analysis and impedance spectroscopy reveal a threshold ion concentration that yields the large hysteresis and high capacitance required for optimal OEGST operation. At this optimal concentration, devices exhibit symmetric weight updates and 14-bit states and consume only 4.4 pJ mm(-2) spike(-1) with a fast speed of 500 Hz. We demonstrate the complex ANN computing capability of OEGSTs with recognition accuracies for the MNIST (98.3%) and CIFAR-10 (>70%) datasets.

키워드

artificial neural networkartificial synapseDTI-2: Exploreionic concentrationorganic electrochemical transistorsolid-state electrolyteTHIN-FILM TRANSISTORSDEVICE
제목
Organic electrolyte-gated synaptic transistors with finely tunable 14-bit states based on ion concentration tailoring
저자
Kim, DongukPyo, Won JunYoun, SangwookSo, JaeheeKim, YoungseokKim, HyungjinKim, Felix Sunjoo
DOI
10.1016/j.device.2025.100940
발행일
2025-12
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