Chemical Analysis of Patterned Mask Cleaning in Organic Light Emitting Diode Fabrication with Raman Spectroscopy

초록

Despite the continually improving efficiency of the fabrication process used to manufacture the organic light emitting diode (OLED) emitter layer, which uses a shadow mask, a method for the cleaning and recycling of the shadow mask is still lacking. One of the main reasons for this is the absence of a quantitative/qualitative method to analyze the cleaning solution using simple in situ measurements. Recently, Raman analysis has become popular because of its convenience, ease of use, and suitability for in situ measurements. Thus, Raman spectroscopy has the capacity to analyze the solution used for cleaning shadow masks. A particular advantage of this approach is that it can detect organic contaminants in the cleaning solution, which are caused by the residue that remains on the shadow mask after the OLED emitter layer fabrication process. Raman spectroscopy has an advantage for analyzing solution condition and contaminant detection between the cleaning solution and organic chemical by using the Raman peak and fluorescence integration method.

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