Mechanical Behavior of Methyl-Silsesquioxane Based Nano Porous Low-K Film Using by Ultraviolet Curing Method

초록

The changes in the mechanical properties of a porous low-k film, subjected to thermal and UV curing, were determined via, nano-indentation. These curing processes had a significant effect on the properties of the dielectric film, was originated by changes in the density, refractive index, and dielectric constant. The molecular structure and film component changing during thermal curing, differed from those resulting from UV curing induced changes had an effect on the mechanical properties. In the case of UV curing, the decrease in the bonding of the carbon component, and the formation of a random network resulted in increased density and improved mechanical properties of the film. This increase in density resulted, in turn, in an increase in the dielectric constant and a loss of the ultra-low-k property (k < 2.2) of the film. However, an optimized UV curing process was established for attaining improved mechanical properties and dielectric constant of methyl silsesquioxane-based porous dielectrics.

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