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Nanoscale ferroelectric switching behavior at charged domain boundaries studied by angle-resolved piezoresponse force microscopy
- Park, Moonkyu;
- Hong, Seungbum;
- Kim, Jiyoon;
- Hong, Jongin;
- No, Kwangsoo
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16초록
We investigated the effect of charged domain boundaries (CDBs) on the coercive voltage (V-c) in polycrystalline Pb(Zr0.25Ti0.75)O-3 (PZT) thin films using angle-resolved piezoresponse force microscopy (AR-PFM). By using the AR-PFM technique, we could observe the detailed domain structure with various degrees of CDBs including neutral domain boundaries in the PZT thin films. We found that the V-c increases at CDBs induced by polarization discontinuities. We attribute the change in V-c to the built-in field created by uncompensated polarization charges at the CDBs in the PZT thin films. (C) 2011 American Institute of Physics. [doi:10.1063/1.3646761]
키워드
dielectric polarisation; domain boundaries; ferroelectric ceramics; ferroelectric switching; ferroelectric thin films; lead compounds; piezoceramics; piezoelectric thin films; piezoelectricity
- 제목
- Nanoscale ferroelectric switching behavior at charged domain boundaries studied by angle-resolved piezoresponse force microscopy
- 저자
- Park, Moonkyu; Hong, Seungbum; Kim, Jiyoon; Hong, Jongin; No, Kwangsoo
- 발행일
- 2011-10
- 유형
- Article
- 권
- 99
- 호
- 14
- 언어
- ENG
- 출판사
- AMER INST PHYSICS
- 발행국가
- 미국
- ISSN
- E 1077-3118
P 0003-6951