Patch-Induced Interfacial Engineering for Suppressed Solvent-Surface Interaction and Stable Perovskite Optoelectronics

초록

This study presents an advanced interfacial engineering strategy that utilizes a dry-transfer patch process to deposit an effective small-molecular cathode interlayer that suppresses recombination, thereby enhancing the reproducibility and stability of perovskite optoelectronics. Conventional solution-processed spin-coating causes solvents to penetrate the underlying layer, resulting in the formation of interfacial defects and unstable charge-transport pathways. To address these issues, a dry-transfer patch process was employed, in which the film is pre-formed within a mold before lamination. This process effectively prevents solvent penetration, enabling the formation of a chemically inert and highly uniform interface. Specifically, the 2D planar small-molecule perylene diimide derivative interlayer deposited via this process effectively suppresses interfacial aggregation and stabilizes charge transport. Consequently, the device exhibits a significantly reduced noise spectral density and an enhanced shot-noise-limited specific detectivity of 2.09 & times; 1012 Jones. Moreover, the improved interface quality leads to enhanced operational stability, enabling the device to retain more than 90% of its initial performance even after long-term storage. Overall, these findings demonstrate that eliminating solvent-induced interfacial perturbations is a critical strategy for simultaneously improving the performance and stability of perovskite optoelectronics.

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