ScholarWorks@중앙대학교

초록

This study presents a Raman spectroscopy-based method for real-time monitoring and quantitative analysis of hydrogen peroxide (H2O2) concentration in chemical mechanical polishing (CMP) slurries·H2O2, a commonly used oxidizer in Co CMP processes, is inherently unstable and prone to degradation, resulting in significant variations in removal rate (RR), static etch rate (SER), and overall process reliability. To address the limitations of conventional detection methods in complex, multi-component slurry systems, a peak area ratio approach using the Raman signals of H2O2 and H2O is proposed. Systematic spectral analysis revealed a strong linear correlation (R2 ≈ 0.98) between the peak area ratio and H2O2 concentration in the range of 0.1–1.0 wt%, validated through more than 1,000 data points. Further evaluation with 0.05 wt% intervals confirmed the method’s sensitivity and reproducibility, with observed deviations primarily attributed to baseline optimization. Additionally, the proposed technique was applied to monitor slurry degradation over time, enabling quantification of oxidizer depletion and providing insight into the temporal stability of the slurry.

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