High-brightness gallium nitride nanowire UV-blue light emitting diodes

초록

We report on high-brightness GaN nanowire UV-blue light emitting diodes (LEDs), which are fabricated by coupling of n-GaN nanowires and p-GaN substrates using two assembly methods, random dispersion (RD) and dielectrophoresis assisted assembly deposition (DAAD). These GaN nanowire LEDs have bright UV-blue emission (411-437 nm) from the n-GaN nanowire/p-GaN substrate junction and the light emission is strong enough to be observed with the naked eye even for a single GaN nanowire LED. The results reported here should have significant implications for the fabrication of highly efficient, low-cost UV-blue LEDs with low power consumption, as compared to conventional thin-film based GaN LEDs.

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