Polarized Raman spectroscopy with differing angles of laser incidence on single-layer graphene

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초록

Chemical vapor deposition (CVD)-grown single-layer graphene samples, transferred onto a transmission electron microscope (TEM) grid and onto a quartz plate, were studied using polarized Raman spectroscopy with differing angles of laser incidence (theta). Two different polarization configurations are used. In an in-plane configuration, the polarization direction of both incident and scattered light is parallel to the graphene plane. In an out-of-plane configuration, the angle between the polarization vector and the graphene plane is the same as the angle of laser incidence (theta). The normalized Raman intensity of the G-band measured in the out-of-plane configuration, with respect to that in the in-plane configuration, was analyzed as a function of theta. The normalized Raman intensity showed approximately cos(2) theta-dependence up to theta = 70 degrees, which can be explained by the fact that only the electric field component of the incident and the scattered photon in the out-of-plane configuration projected onto the graphene plane can contribute to the Raman scattering process because of the perfect confinement of the electrons to the graphene plane.

키워드

Graphene; Polarized Raman; Oblique incidence; Raman selection rule; WALL CARBON NANOTUBES; BILAYER GRAPHENE; DEPENDENCE; FILMS
제목
Polarized Raman spectroscopy with differing angles of laser incidence on single-layer graphene
저자
Heo, Gaeun; Kim, Yong Seung; Chun, Seung-Hyun; Seong, Maeng-Je
DOI
10.1186/s11671-015-0743-4
발행일
2015-02
유형
Article
저널명
Nanoscale Research Letters
권
10
호
1
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