Polarized Raman spectroscopy with differing angles of laser incidence on single-layer graphene

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초록

Chemical vapor deposition (CVD)-grown single-layer graphene samples, transferred onto a transmission electron microscope (TEM) grid and onto a quartz plate, were studied using polarized Raman spectroscopy with differing angles of laser incidence (theta). Two different polarization configurations are used. In an in-plane configuration, the polarization direction of both incident and scattered light is parallel to the graphene plane. In an out-of-plane configuration, the angle between the polarization vector and the graphene plane is the same as the angle of laser incidence (theta). The normalized Raman intensity of the G-band measured in the out-of-plane configuration, with respect to that in the in-plane configuration, was analyzed as a function of theta. The normalized Raman intensity showed approximately cos(2) theta-dependence up to theta = 70 degrees, which can be explained by the fact that only the electric field component of the incident and the scattered photon in the out-of-plane configuration projected onto the graphene plane can contribute to the Raman scattering process because of the perfect confinement of the electrons to the graphene plane.

키워드

GraphenePolarized RamanOblique incidenceRaman selection ruleWALL CARBON NANOTUBESBILAYER GRAPHENEDEPENDENCEFILMS
제목
Polarized Raman spectroscopy with differing angles of laser incidence on single-layer graphene
저자
Heo, GaeunKim, Yong SeungChun, Seung-HyunSeong, Maeng-Je
DOI
10.1186/s11671-015-0743-4
발행일
2015-02
유형
Article
저널명
Nanoscale Research Letters
10
1
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