Conversion from unipolar to bipolar resistance switching by inserting Ta2O5 layer in Pt/TaOx/Pt cells

초록

We observed unipolar resistance switching in Pt/TaOx/Pt cells. We could make the cell have the bipolar resistance switching by inserting a stoichiometric Ta2O5 layer between Pt and TaOx layers. Bipolar resistance switching in Pt/Ta2O5/TaOx/Pt cells occurred reliably without applying an external compliance current. With increase in the Ta2O5 layer thickness, the current value at the low-resistance state became decreased but the forming voltage became increased. We could explain these intriguing phenomena using the interface-modified random circuit breaker network model. (C) 2011 American Institute of Physics. [doi:10.1063/1.3587809]