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The Memristive Properties of a Single VO2 Nanowire with Switching Controlled by Self-Heating
- Bae, Sung-Hwan;
- Lee, Sangmin;
- Koo, Hyun;
- Lin, Long;
- Jo, Bong Hyun;
- 외 2명
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179키워드
vanadium dioxide nanowire; metal-to-insulator transition; memristor; non-volatile memory device; resistive switching device; METAL-INSULATOR-TRANSITION; PHASE-TRANSITION; ELECTRIC-FIELD; NANOBEAM
- 제목
- The Memristive Properties of a Single VO2 Nanowire with Switching Controlled by Self-Heating
- 저자
- Bae, Sung-Hwan; Lee, Sangmin; Koo, Hyun; Lin, Long; Jo, Bong Hyun; Park, Chan; Wang, Zhong Lin
- 발행일
- 2013-09
- 유형
- Article
- 권
- 25
- 호
- 36
- 페이지
- 5098 ~ 5103
- 언어
- ENG
- 출판사
- WILEY-V C H VERLAG GMBH
- 발행국가
- 독일
- 분량
- 6 페이지
- ISSN
- E 1521-4095
P 0935-9648