상세 보기
초록
In this study, we carried out an investigation of the etch characteristics of TiO2 thin films and the selectivity of TiO2 to SiO2 in adaptive coupled C1(2)/Ar plasma. The maximum etch rate of the TiO2 thin film was 136 +/- 5 nm/min at a gas mixing ratio of C1(2)/Ar (75%: 25%). The X-ray photoelectron spectroscopy (XPS) analysis showed the efficient destruction of oxide bonds by the ion bombardment as well as the accumulation of low volatile reaction products on the etched surface.
키워드
Etching; TiO2; High density plasma; X-ray photoelectron spectroscopy; INDUCTIVELY-COUPLED PLASMA; MODEL
- 제목
- Surface Etching of TiO2 Thin Films Using High Density Cl-2/Ar Plasma
- 저자
- Woo, Jong-Chang; Joo, Young-Hee; Kim, Chang-Il
- 발행일
- 2015-12
- 유형
- Article
- 권
- 16
- 호
- 6
- 페이지
- 346 ~ 350