An X-Band 5 Bit Phase Shifter With Low Insertion Loss in 0.18 mu m SOI Technology

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27

초록

This letter presents a 5 b phase shifter using a commercial 0.18 mu m SOI process for X-band phased array antenna. The phase coverage of 360 degrees with the LSB of 11.25 degrees is achieved at 8-12 GHz. The RMS phase error and amplitude variation are less than 6.5 degrees and 0.5 dB, respectively. The measured insertion loss is less than 10.8 dB, and the input and output return losses are over 12 dB at 8-12 GHz. The current consumption is nearly zero with 1.8 V supply. The chip size is 1.14 x 0.78 mm(2) excluding pads. To the authors' knowledge, this is the first demonstration of X-band phase shifter using a commercial SOI technology.

키워드

DPDT switch; phase shifter; phased array antenna; SOI; X-band
제목
An X-Band 5 Bit Phase Shifter With Low Insertion Loss in 0.18 mu m SOI Technology
저자
Cho, Moon-Kyu; Baek, Donghyun; Kim, Jeong-Geun
DOI
10.1109/LMWC.2012.2226209
발행일
2012-12
유형
Article
저널명
IEEE Microwave and Wireless Components Letters
권
22
호
12
페이지
648 ~ 650