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An X-Band 5 Bit Phase Shifter With Low Insertion Loss in 0.18 mu m SOI Technology
- Cho, Moon-Kyu;
- Baek, Donghyun;
- Kim, Jeong-Geun
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22Citations
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27초록
This letter presents a 5 b phase shifter using a commercial 0.18 mu m SOI process for X-band phased array antenna. The phase coverage of 360 degrees with the LSB of 11.25 degrees is achieved at 8-12 GHz. The RMS phase error and amplitude variation are less than 6.5 degrees and 0.5 dB, respectively. The measured insertion loss is less than 10.8 dB, and the input and output return losses are over 12 dB at 8-12 GHz. The current consumption is nearly zero with 1.8 V supply. The chip size is 1.14 x 0.78 mm(2) excluding pads. To the authors' knowledge, this is the first demonstration of X-band phase shifter using a commercial SOI technology.
키워드
DPDT switch; phase shifter; phased array antenna; SOI; X-band
- 제목
- An X-Band 5 Bit Phase Shifter With Low Insertion Loss in 0.18 mu m SOI Technology
- 저자
- Cho, Moon-Kyu; Baek, Donghyun; Kim, Jeong-Geun
- 발행일
- 2012-12
- 유형
- Article
- 권
- 22
- 호
- 12
- 페이지
- 648 ~ 650
- 언어
- ENG
- 출판사
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- 발행국가
- 미국
- 분량
- 3 페이지
- ISSN
- P 1531-1309