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Mechanically reliable MEMS variable capacitor using Single Crystalline Silicon (SCS) structure
- Kim, J.-M.;
- Lee, S.;
- Kim, J.-M.;
- Baek, C.-W.;
- Kwon, Y.;
- 외 1명
Citations
SCOPUS
0초록
In this paper, we firstly proposed a mechanically reliable parallel-plate type variable capacitor with a single crystalline silicon (SCS) supporting structure. The demonstrated variable capacitor was fabricated using an SiOG (Silicon-On-Glass) process, and both mechanical and electrical characteristics were measured. Total chip size was 1.05 mm × 0.72 mm, and the pull-in voltage was measured to be 37 V. With and without the applied DC bias, the measured S11 and S21 were changed from -15.6 dB to -5.1 dB, and from -0.49 dB to -2.3 dB at 30 GHz, respectively. The measured capacitance at the up and the down state were 30 fF and 140 fF, respectively. Therefore, the capacitance ratio is calculated to be 4.67. © 2005 IEEE.
키워드
Mechanical lifetime; Mechanical reliability; SCS RF MEMS variable capacitor; SiOG process; Capacitance; Capacitors; Electric potential; Silicon; Single crystals; Mechanical lifetime; Mechanical reliability; SCS RF MEMS variable capacitor; SiOG process; Microelectromechanical devices
- 제목
- Mechanically reliable MEMS variable capacitor using Single Crystalline Silicon (SCS) structure
- 저자
- Kim, J.-M.; Lee, S.; Kim, J.-M.; Baek, C.-W.; Kwon, Y.; Kim, Y.-K.
- 발행일
- 2005-06
- 유형
- Conference Paper
- 저널명
- Digest of Technical Papers - International Conference on Solid State Sensors and Actuators and Microsystems, TRANSDUCERS '05
- 권
- 1
- 페이지
- 1080 ~ 1083
- 언어
- ENG
- 분량
- 4 페이지
- ISSN
- P 0000-0000