Raman scattering monitoring of thin film materials for atomic layer etching/deposition in the nano-semiconductor process integration

  • Kim, Jae Bin; 
  • Kim, Dae Sik; 
  • Kim, Jin Seok; 
  • Choe, Jin Hyun; 
  • Ahn, Da Won; 
  • ... Pyo, Sung Gyu; 
  • 외 1명
Citations

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초록

According to Moore's law, the semiconductor industry is experiencing certain challenges in terms of adapting to highly sophisticated integrated technology. Therefore, controlling materials at the atomic scale is considered a mandatory requirement for further development. To this end, atomic layer deposition and etching skills are being increasingly researched as potential solutions. However, several considerations exist for adopting atomic technology with respect to surface analysis. This review primarily focuses on the use of Raman scattering for evaluating atomic-layered materials. Raman scattering analysis is expected to gradually expand as a semiconductor process and mass-production monitoring technology. As this can enhance the applications of this method, our review can form the basis for establishing Raman scattering analysis as a new trend for atomic-scale monitoring.

키워드

INTERFACE PASSIVATION LAYER; INDUCTIVELY-COUPLED PLASMA; IN-SITU; SURFACE-CHEMISTRY; LATTICE-VIBRATIONS; LITHIUM INSERTION; CARBON NANOTUBES; SILICON DIOXIDE; DEPOSITION; SPECTROSCOPY
제목
Raman scattering monitoring of thin film materials for atomic layer etching/deposition in the nano-semiconductor process integration
저자
Kim, Jae Bin; Kim, Dae Sik; Kim, Jin Seok; Choe, Jin Hyun; Ahn, Da Won; Jung, Eun Su; Pyo, Sung Gyu
DOI
10.1063/5.0147685
발행일
2023-12
유형
Review
저널명
CHEMICAL PHYSICS REVIEWS
권
4
호
4