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Metal-Oxide Thin-Film Transistors for Flexible Electronics
- Kim, Y.-H.;
- Park, S.K.
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1초록
Flexible electronic devices have been extensively researched in industries and research institutions with an aim to create new conceptual electronics such as flexible and bendable devices. Metal-oxide (MO) semiconductors have attracted a great deal of interest because of their relatively high carrier mobility and better operational stability over amorphous silicon thin-film transistors (a-Si:H) and organic thin-film transistors (TFTs). The most intriguing advantages of using MO semiconductor TFTs in flat-panel displays is the large-area scalability by relatively simple fabrication processes compared to low-temperature polycrystalline silicon (LTPS) TFT technology. Vacuum deposition processes are now widely used in flat-panel display manufacturing, and sputtering technology is one of the most mature technologies among many other deposition techniques. Solution-processed MO TFT is becoming one of the essential technologies for future flexible electronics because of its high electrical performance with reasonable reliability. © 2015 Wiley-VCH Verlag GmbH & Co. KGaA. All rights reserved.
키워드
- 제목
- Metal-Oxide Thin-Film Transistors for Flexible Electronics
- 저자
- Kim, Y.-H.; Park, S.K.
- 발행일
- 2015-01
- 유형
- Book Chapter
- 저널명
- Large Area and Flexible Electronics
- 페이지
- 101 ~ 116
- 언어
- ENG
- 출판사
- wiley
- 분량
- 16 페이지
- ISSN
- P 0000-0000