Reversible changes between bipolar and unipolar resistance-switching phenomena in a Pt/SrTiOx/Pt cell

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초록

We find that resistance switching (RS) phenomena change reversibly between bipolar RS (BRS) and unipolar RS (URS) in a Pt/SrTiOx/Pt cell. For an asymmetric electrode configuration of Ti/SrTiOx/Pt cells whose top and bottom interfaces are Ohmic and Schottky-like rectifying, we determine that BRS only occurs when a positive voltage is applied to the bottom Pt electrode at the forming process. During the set process of BRS in a Pt/SrTiOx/Pt cell, O-2 bubbles develop on the top Pt electrode. From the experimental results for a single sample in which both BRS and URS occur, O2- ion movement and consequent interfacial resistance modification might play an important role in BRS but not URS. (C) 2012 Elsevier B.V. All rights reserved.

키워드

Resistance switching; Memristor; Resistance random-access memory; MEMORY
제목
Reversible changes between bipolar and unipolar resistance-switching phenomena in a Pt/SrTiOx/Pt cell
저자
Lee, Shin Buhm; Chang, Seo Hyoung; Yoo, Hyang Keun; Yoon, Moon Jee; Yang, Sang Mo; Kang, Bo Soo
DOI
10.1016/j.cap.2012.04.030
발행일
2012-11
유형
Article
저널명
Current Applied Physics
권
12
호
6
페이지
1515 ~ 1517