Charge Retention of Self-Assembled Ferredoxin Monolayer by the Reduction-Oxidation Control for Biomemory Device

  • Nam, Yun-Suk; 
  • Kim, Sang-Uk; 
  • Lee, Taek; 
  • Kang, Da-Yeon; 
  • Min, Junhong; 
  • 외 1명
Citations

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초록

The oxidation-reduction control to store charges in self-assembled ferredoxin layer was investigated by scanning electrochemical method. Micro sized spot arrays consisting of ferredoxin proteins which used as the storage element were formed on chemically modified gold coated glass by micro contanct printing method. The formation of ferredoxin array was confirmed by the atomic force microscopy. The charge store was investigated by external applied reduction potential to ferredoxin as a write function, and the stored reducing charge was measured as a read function of storage applications. In the reduction state, the stored charge was maintained for around 90 sec. This ferredoxin layer can be used as the molecular size information storage by applying the reducing potential and measuring the current flow when achieving the current of individual ferredoxin molecule.

키워드

Ferredoxin; Scanning Electrochemical Method; Open Circuit Potential; Chronoamperometry; Micro Contact Printings; SURFACE-PLASMON RESONANCE; RECTIFIED PHOTOCURRENT; MOLECULAR PHOTODIODE; PROTEIN; FABRICATION; STORAGE; AZURIN; MEMORY; IMMOBILIZATION; IMMUNOSENSOR
제목
Charge Retention of Self-Assembled Ferredoxin Monolayer by the Reduction-Oxidation Control for Biomemory Device
저자
Nam, Yun-Suk; Kim, Sang-Uk; Lee, Taek; Kang, Da-Yeon; Min, Junhong; Choi, Jeong-Woo
DOI
10.1166/jnn.2009.1667
발행일
2009-12
유형
Article; Proceedings Paper
저널명
Journal of Nanoscience and Nanotechnology
권
9
호
12
페이지
7113 ~ 7117