MOSFET Gate Driver Circuit Design for High Repetitive (200kHz) High Voltage (10kV) Solid-State Pulsed-Power Modulator

초록

Solid-state pulsed power modulators can effectively generate high repetition rate pulses, which are required in applications where the process rate depends on the repetition rate, e.g., plasma source ion implantation and deposition, plasma immersion ion milling, and diamond-like carbon coating. In this study, a solid-state pulsed-power modulator for generating high repetitive pulses is developed. Active pull-down circuits and designed MetalOxideSemiconductor Field-Effect Transistor (MOSFET) gate drivers are applied to the modulator without increasing its size. The drivers enable a fast rise, fall time and minimize pulse width, which are effective for high-repetition-rate pulse applications. The developed modulator exhibits a maximum output pulse voltage of 10 kV, maximum output pulse current of 50A, pulse width between 200ns and 10us, maximum pulse repetition rate of 200 kHz, and average output power of 10 kW. The operation principle of the designed MOSFET gate driver is analyzed in detail. Experimental results show that the modulator operates stably at a high repetition rate of 10kV and 200 kHz and the feasibility of this proposed circuit for high repetition rate operation are verified. IEEE

키워드