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Effects of solution-processed Al2O3 gate insulator thickness on IGZO TFTs
- Song, Seung-Min;
- Lee, Jeong-Soo;
- Kang, Dong-Won;
- Kwon, Jang-Yeon;
- Han, Min-Koo
Citations
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0초록
We fabricated ln-Ga-Zn-O (IGZO) thin film transistors (TFTs) employing solution-processed aluminum oxide (Al2O3) gate insulators with various thicknesses from 100 nm to 370 nm. Leakage current density of Al2O3 gate insulators decreased exponentially and dielectric constant decreased with increasing insulator thickness. When the thickness of gate insulator was 230 nm, the sputtered IGZO TFT showed 9.00 cm(2)/Vs of the saturation mobility and 3.4 V of the threshold voltage.
키워드
solution-processed Al2O3 gate insulator; multi-coating process; thickness effect; IGZO TFTs; THIN-FILM TRANSISTORS; HIGH-PERFORMANCE; DIELECTRICS
- 제목
- Effects of solution-processed Al2O3 gate insulator thickness on IGZO TFTs
- 저자
- Song, Seung-Min; Lee, Jeong-Soo; Kang, Dong-Won; Kwon, Jang-Yeon; Han, Min-Koo
- 발행일
- 2012
- 유형
- Proceedings Paper
- 저널명
- IDW/AD '12: PROCEEDINGS OF THE INTERNATIONAL DISPLAY WORKSHOPS, PT 1
- 권
- 19
- 페이지
- 445 ~ 448
- 언어
- ENG
- 출판사
- INST IMAGE INFORMATION & TELEVISION ENGINEERS
- 발행국가
- 일본
- 분량
- 4 페이지
- ISSN
- P 1883-2490