ScholarWorks@중앙대학교

초록

Organic–inorganic hybrid perovskite single crystals exhibit outstanding optoelectronic properties, holding significant promise for next-generation optoelectronic applications. However, their carrier mobility remains limited by conventional growth methods. Herein, we report a strategy to significantly enhance the carrier mobility of CH3NH3PbBr3 single crystals to 541 cm2 V−1 s−1 through crystal lattice compression. This was achieved using a freezing temperature growth method, where high-quality CH3NH3PbBr3 single crystals were grown at sub-zero degree Celsius temperature. The induced compressive strain markedly improved the optoelectronic properties, reducing the surface trap density to 3.73 × 107 cm−2 and extending the carrier lifetime to 15.83 µs. Moreover, lattice compression enabled fine-tuning of the intrinsic band gap from 2.1 eV to 2.24 eV, resulting in photoluminescence peak shift from 555 nm to 520 nm. These findings highlight crystal lattice compression as a powerful strategy to tailor the fundamental properties of perovskite single crystals, offering a pathway toward their integration in high-performance optoelectronic devices.

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