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Design and Analysis of Gate-recessed AlGaN/GaN Fin-type Field-Effect Transistor
- Jang, Young In;
- Seo, Jae Hwa;
- Yoon, Young Jun;
- Eun, Hye Rim;
- Kwon, Ra Hee;
- ... Kwon, Hyuck-In;
- 외 2명
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4초록
This paper presents the design and analysis of gate-recessed AlGaN/GaN Fin-type Field-Effect Transistor (FinFET). The three-dimensional (3-D) technology computer-aided design (TCAD) simulations were performed to analyze the direct-current (DC) and radio-frequency (RF) characteristics for AlGaN/GaN FinFETs. The fin width (W-fin) and the height of GaN layer (H-GaN) are the design parameters used to improve the electrical performances of gate-recessed AlGaN/ GaN FinFET.
키워드
AlGaN/GaN; recessed gate; fin-type field-effect transistor (FinFET); 3-D TCAD; PEROXIDE OXIDATION TECHNIQUE; AL2O3/GAN MOSFET; CAP LAYER; HEMT; PERFORMANCE; SUBSTRATE; VOLTAGE
- 제목
- Design and Analysis of Gate-recessed AlGaN/GaN Fin-type Field-Effect Transistor
- 저자
- Jang, Young In; Seo, Jae Hwa; Yoon, Young Jun; Eun, Hye Rim; Kwon, Ra Hee; Lee, Jung-Hee; Kwon, Hyuck-In; Kang, In Man
- 발행일
- 2015-10
- 유형
- Article
- 권
- 15
- 호
- 5
- 페이지
- 554 ~ 562
- 언어
- ENG
- 출판사
- IEEK PUBLICATION CENTER
- 발행국가
- 대한민국
- 분량
- 9 페이지
- ISSN
- E 2233-4866
P 1598-1657