Characterization of Electroless-Deposited Ternary M1M2-R (M1=Co, Ni, M2=W, Mo, R = P, B) Nano Thin Film for Optical-Sensor Interconnects

초록

We evaluated the selective metal capping layer in a complementary metal-oxide semiconductor image sensor using electroless-deposited CoWP and NiWP films. We investigated the correlation integration issues and the selectivity of the capping layer formed by the electroless plating process. M1M2-R (M1 = Co, Ni, M2 = W, Mo, R = P, B) was selectively deposited on Cu wiring through electroless plating after chemical mechanical polishing via the Cu damascene method. The PdCl2/HCI-based electroless-deposited CoWP exhibited very good deposition characteristics without residue compared to a non-chloride Pd-activated CoWP film.

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