상세 보기
AlAs/GaAs micropillar cavities with quality factors exceeding 150.000
- Reitzenstein, S.;
- Hofmann, C.;
- Gorbunov, A.;
- Gorbunov, M.;
- Strauss, M.;
- ... Kwon, S. H.;
- 외 5명
Citations
WEB OF SCIENCE
288초록
The authors report on AlAs/ GaAs micropillar cavities with unprecedented quality factors based on high reflectivity distributed Bragg reflectors (DBRs). Due to an increased number of mirror pairs in the DBRs and an optimized etching process record quality (Q) factors up to 165.000 are observed for micropillars with diameters of 4 mu m. Optical studies reveal a very small ellipticity of 5 X 10(-4) of the pillar cross section. Because of the high Q factors, strong coupling with a vacuum Rabi splitting of 23 mu eV is observed for micropillars with a diameter of 3 mu m. (c) 2007 American Institute of Physics.
키워드
SEMICONDUCTOR QUANTUM DOTS
- 제목
- AlAs/GaAs micropillar cavities with quality factors exceeding 150.000
- 저자
- Reitzenstein, S.; Hofmann, C.; Gorbunov, A.; Gorbunov, M.; Strauss, M.; Kwon, S. H.; Schneider, C.; Loeffler, A.; Hoefling, S.; Kamp, M.; Forchel, A.
- 발행일
- 2007-06
- 유형
- Article
- 권
- 90
- 호
- 25
- 언어
- ENG
- 출판사
- AMER INST PHYSICS
- 발행국가
- 미국
- ISSN
- E 1077-3118
P 0003-6951