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Irreversible Degradation Behaviors of an Electrolyte-gated Polyaniline (PANI) Nanowire Field-effect Transistor
- Lee, Seung-Yong;
- Lee, Sang-Kwon;
- Lim, Hyuneui;
- Choi, Gyoung-Rin
Citations
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8초록
We studied the degradation properties of a conducing polyaniline (PANI) nanowire field-effect transistor (FET) operating in a three-probe FET structure in an electrolyte solution on a SiO(2)/Si substrate. We observed that the current-voltage characteristics of an electrolyte-gated PANI nanowire FET swept for 13 cycles in a cyclic potential mode exhibited clear irreversible degradation, as shown by the drain current-gate voltage curves. We propose that the degradation of the PANI nanowire FET, which indicates a conductance loss and gain in the oxidation and reduction modes, respectively, is attributable to the intensity of Coulombic repulsion in the cycle mode.
키워드
Polyaniline; Nanowire; Degradation; Coulombic repulsion; CONDUCTING POLYMER; POLYPYRROLE; SENSOR; COMPOSITE; ARRAYS
- 제목
- Irreversible Degradation Behaviors of an Electrolyte-gated Polyaniline (PANI) Nanowire Field-effect Transistor
- 저자
- Lee, Seung-Yong; Lee, Sang-Kwon; Lim, Hyuneui; Choi, Gyoung-Rin
- 발행일
- 2010-12
- 유형
- Article
- 권
- 57
- 호
- 6
- 페이지
- 1416 ~ 1420
- 언어
- ENG
- 출판사
- KOREAN PHYSICAL SOC
- 발행국가
- 대한민국
- 분량
- 5 페이지
- ISSN
- E 1976-8524
P 0374-4884