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Fast and Stable Solution-Processed Transparent Oxide Thin-Film Transistor Circuits
- Kim, Kwang Ho;
- Kim, Yong-Hoon;
- Kim, Hyun Jae;
- Han, Jeong-In;
- Park, Sung Kyu
Citations
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23초록
Fast and stable zinc-tin-oxide (ZTO) thin-film transistor (TFT) circuits were fabricated by simple and effective solution processing. The solution-processed ZTO TFTs have shown saturation mobility > 2.5 +/- 0.29 cm(2)/V.s (W/L = 100/10 mu m) and subthreshold slope < 0.4 +/- 0.122 V/dec. The ZTO seven-stage ring oscillators have shown an oscillation frequency of similar to 800 kHz with a supply voltage V-DD = 60 V, corresponding to a propagation delay of < 90 ns per stage. In addition, with appropriate passivation onto the semiconductor channel area, the circuits have shown relatively stable operation even at a gate and source/drain bias voltage of > 50 V for several hours.
키워드
Ring oscillator; solution process; thin-film transistor (TFT); zinc-tin-oxide (ZTO); ELECTRICAL CHARACTERISTICS; TFTS; GATE
- 제목
- Fast and Stable Solution-Processed Transparent Oxide Thin-Film Transistor Circuits
- 저자
- Kim, Kwang Ho; Kim, Yong-Hoon; Kim, Hyun Jae; Han, Jeong-In; Park, Sung Kyu
- 발행일
- 2011-04
- 유형
- Article
- 권
- 32
- 호
- 4
- 페이지
- 524 ~ 526
- 언어
- ENG
- 출판사
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- 발행국가
- 미국
- 분량
- 3 페이지
- ISSN
- E 1558-0563
P 0741-3106