Fast and Stable Solution-Processed Transparent Oxide Thin-Film Transistor Circuits

  • Kim, Kwang Ho; 
  • Kim, Yong-Hoon; 
  • Kim, Hyun Jae; 
  • Han, Jeong-In; 
  • Park, Sung Kyu
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초록

Fast and stable zinc-tin-oxide (ZTO) thin-film transistor (TFT) circuits were fabricated by simple and effective solution processing. The solution-processed ZTO TFTs have shown saturation mobility > 2.5 +/- 0.29 cm(2)/V.s (W/L = 100/10 mu m) and subthreshold slope < 0.4 +/- 0.122 V/dec. The ZTO seven-stage ring oscillators have shown an oscillation frequency of similar to 800 kHz with a supply voltage V-DD = 60 V, corresponding to a propagation delay of < 90 ns per stage. In addition, with appropriate passivation onto the semiconductor channel area, the circuits have shown relatively stable operation even at a gate and source/drain bias voltage of > 50 V for several hours.

키워드

Ring oscillator; solution process; thin-film transistor (TFT); zinc-tin-oxide (ZTO); ELECTRICAL CHARACTERISTICS; TFTS; GATE
제목
Fast and Stable Solution-Processed Transparent Oxide Thin-Film Transistor Circuits
저자
Kim, Kwang Ho; Kim, Yong-Hoon; Kim, Hyun Jae; Han, Jeong-In; Park, Sung Kyu
DOI
10.1109/LED.2011.2107494
발행일
2011-04
유형
Article
저널명
IEEE Electron Device Letters
권
32
호
4
페이지
524 ~ 526