Sign Reversal of Hall Conductivity in Polycrystalline FeRh Films via the Topological Hall Effect in the Antiferromagnetic Phase

  • Kim, Yun-Ho
  • Choi, Jae Won
  • Cho, Jung-Min
  • Kim, Gil-Sung
  • Park, No-Won
  • ... Lee, Sang-Kwon
  • 외 6명
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초록

The intrinsic Berry curvature in ferromagnetic (FM) materials significantly influences Hall conductivity during the antiferromagnetic (AFM)-to-FM phase transition, as demonstrated through the anomalous Hall effect (AHE). First-principles calculations indicate negligible spin Hall conductivity in FeRh materials in the AFM phase due to time-reversal symmetry breaking. To date, the contribution of the Berry curvature to the spin Hall effect remains unexamined in the context of AHE measurements. This study presents the temperature-dependent spin and carrier transport properties of FeRh thin films across AFM-to-FM transitions. In the AFM phase, a nonzero AHE signal is observed and even reverses its sign when the film transitions to the FM phase (above T = 175 K). This nonzero AHE signal contrasts with predictions from density functional theory calculations. Notably, an additional Hall conductivity contribution (topological Hall effect), attributed to the spin Berry curvature, results in an overall weak negative Hall conductivity in the AFM phase.

키워드

Anomalous Hall effectBerry curvatureFerromagnetic FeRh filmsMagnetic phase transitionSpin Hall conductivityTopological Hall effectMAGNETIC-PROPERTIES
제목
Sign Reversal of Hall Conductivity in Polycrystalline FeRh Films via the Topological Hall Effect in the Antiferromagnetic Phase
저자
Kim, Yun-HoChoi, Jae WonCho, Jung-MinKim, Gil-SungPark, No-WonPark, GangminAkhanda, Md SabbirShivaram, BellaveBennett, StevenZebarjadi, MonaLee, Won-YongLee, Sang-Kwon
DOI
10.1021/acs.nanolett.4c05329
발행일
2025-02
유형
Article; Early Access
저널명
Nano Letters
25
10
페이지
3733 ~ 3739