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Fabrication and Characterization of P-implanted Si-nanowire Field-effect Transistors (n-SiNW FETs)
- Lee, Seung-Yong;
- Jang, Chan-Oh;
- Hyung, Jung-Hwan;
- Kim, Dong-Joo;
- Kim, Tae-Hong;
- ... Lee, Sang-Kwon;
- 외 2명
Citations
WEB OF SCIENCE
2초록
We report on the fabrication and the electrical characterization of n-channel silicon nanowire (SiNW) field-effect transistors (FETs), which were prepared using phosphorous (P)-ion implantation in the region of the source/drain in SiNWs at a (lose of 1 x 10(14) ions/cm(2) and an energy of 10 keV. The current-voltage characteristics of the P-implanted SiNW FET exhibit clear n-type characteristics. We also observed critical changes in the surface morphology on the SiNWs after annealing at temperatures above 950 degrees C.
키워드
Ion-implantation; Si nanowires; Spheroidization; Activation annealing; TEMPERATURE; GROWTH
- 제목
- Fabrication and Characterization of P-implanted Si-nanowire Field-effect Transistors (n-SiNW FETs)
- 저자
- Lee, Seung-Yong; Jang, Chan-Oh; Hyung, Jung-Hwan; Kim, Dong-Joo; Kim, Tae-Hong; Lee, Sang-Kwon; Koo, Sang-Mo; Kim, Moon-Deok
- 발행일
- 2009-07
- 유형
- Article; Proceedings Paper
- 권
- 55
- 호
- 1
- 페이지
- 28 ~ 31
- 언어
- ENG
- 출판사
- KOREAN PHYSICAL SOC
- 발행국가
- 대한민국
- 분량
- 4 페이지
- ISSN
- E 1976-8524
P 0374-4884