Defects controlled stress engineering in Al-doped ZnO transparent multilayered thin films

초록

This study explores stress engineering in multilayered structures of Al-doped ZnO thin films by controlling defects in them. Al-doped ZnO thin films are examples of transparent conducting oxides. Owing to their high conductivity and transparency, Al-doped ZnO thin films have various promising applications. However, defects and dislocations in thin films can deteriorate their electrical and optical properties. These defects or dislocations can be formed during the thin-film deposition process. Especially, defects can be formed between the layers during the stacking process of the sol–gel method. Therefore, methods to control defects have been designed and simulated to engineer stress in thin films. In this study, layered Al-doped ZnO thin films with different thicknesses were prepared to investigate the interface effects and electron motion in them. © 2022, The Korean Ceramic Society.

키워드