Evolution of electronic states in GaAs1−xNx probed by resonant Raman spectroscopy

초록

Two distinct maxima EW and EW′ are observed in the resonant Raman-scattering profile for the LO phonon asymmetric linewidth broadening in GaAs1−xNx and are attributed to states arising from a splitting of the quadruply degenerate conduction band near the L point. The data provide further insight into the physics underlying the giant band-gap bowing observed in GaAs1−xNx, as well as reveal asymmetric linewidth broadening to be a powerful signature for studying strongly localized impurity states in semiconductors. © 2003 The American Physical Society.