Rapid thermal annealing-assisted zinc oxide with controlled oxygen impurities for response power and stress resistivity in organic photo-electronics

초록

This study introduces a rapid thermal annealing (RTA) system integrated into the solution process of the zinc oxide (ZnO) electron transporting layer (ETL), enabling light-induced direct heat transfer to enhance the performance and durability of organic photoelectronic devices, including organic photovoltaics (OPVs) and organic photodetectors (OPDs). By introducing a one-step RTA process, the system achieves a well-condensed ZnO ETL with controlled oxygen vacancies, hydroxyl groups, and acetate groups, while effectively inducing a uniform surface morphology compared to conventional methods. This modification enhances the charge transport characteristics in OPVs, enabling the fabrication of devices with high reproducibility. When evaluated as an OPD, the modified ETL suppressed leakage current and reduced trap sites within the device, resulting in increased specific detectivity and significant improvements in photoresponse time and responsivity. In particular, under thermal and ultraviolet stress conditions, the ZnO films processed via RTA exhibited improved durability and enhanced stability in both standalone films and integrated devices. These effects are attributed to the one-step control of oxygen-related impurities, suggesting that the proposed approach can be broadly applied in the development of high-performance, stable organic photoelectronic devices.

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