High-mobility spin-cast organic thin film transistors

초록

We report high- mobility organic thin film transistors (OTFTs) with good uniformity using the small molecule organic semiconductor 2,8- difluoro- 5,11- bis(triethylsilylethynyl) anthradithiophene (diF- TESADT). diF- TESADT was spin cast to form OTFTs with a carrier mobility of more than 1.5 cm(2) / V s and shows a useful differential microstructure on or near pentaflorobenzenethiol (PFBT) treated Au source/ drain electrodes compared to untreated Au or gate dielectric areas with improved molecular order observed on PFBT treated Au electrodes. For short channel length devices diF- TESADT crystal grains extend between the source and drain electrodes, resulting in increasing OTFT field effect mobility for decreasing gate length. (c) 2008 American Institute of Physics.

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