Electrical Transport Characteristics of PEDOT:PSS/n-Si Schottky Junction Diodes and Electrical Degradation in Hybrid Solar Cells

초록

We have recently reported on the electrical transport characteristics of PEDOT:PSS/n-Si Schottky junction diodes, which demonstrated excellent rectifying behavior. In this study, we investigated in further detail the electrical transport properties of Schottky diodes and the electrical degradation in PEDOT:PSS-based solar cells. To examine the electrical properties, Schottky barrier heights, and ideality factors of Au/PEDOT:PSS/n-Si Schottky diodes, both current-voltage and capacitance-voltage measurements were conducted. In addition, we fabricated hybrid PEDOT:PSS/n-Si solar cells to compare the electrical degradation of the devices with and without polymethylmethacrylate (PMMA) layers. Our experimental results suggest that the presence of a PMMA layer in a PEDOT:PSS/n-Si solar cell significantly reduces the electrical degradation resulting from air exposures of up to 10 days.

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