Time Dependent Optical Annealing Effects on Al Doped ZnO Transparent Conducting Oxide Thin Films

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초록

Aluminum-doped zinc oxide (AZO) thin films have been deposited on glass substrates by employing spin coating method for transparent conducting oxide applications. In this paper, different mol% of Al doped ZnO thin films were prepared and analyzed. And then selected 0.5 mol% Al doped ZnO thin films were prepared for time dependent optical annealing process to know the effects on the structural, optical, and electrical properties. Experimental results showed that optical annealing process affected the microstructure, electrical resistance and optical transmittance of the AZO thin films. X-ray diffraction analysis showed that all films have a (002) peak with the preferentially c-axis oriented normal to the substrate surface. Optical transmittance spectra of the AZO thin films exhibited transmittance higher than about 80% within the visible wavelength region. Sheet resistance result revealed that optimized RTA improves conductance of films.

키워드

AZO; Annealing Effects; TCO; SOL-GEL METHOD; ZINC-OXIDE; TEMPERATURE; ORIENTATION
제목
Time Dependent Optical Annealing Effects on Al Doped ZnO Transparent Conducting Oxide Thin Films
저자
Kim, Jinhwan; Lee, Gun-Hyun; Lee, Su-Yong; Oh, Young-Jae; Oh, Seung-Il; Lee, Yun-Chung; Yun, Jun-Sang; Chang, Seung-Wook; Kim, Sung-Jin; Lee, Sang-Kwon; Koh, Jung-Hyuk
DOI
10.1166/jno.2015.1754
발행일
2015-06
유형
Article
저널명
Journal of Nanoelectronics and Optoelectronics
권
10
호
3
페이지
381 ~ 385