Electrical Transport Characterization of PEDOT:PSS/n-Si Schottky Diodes and Their Applications in Solar Cells

초록

We demonstrate locally contacted PEDOT:PSS Schottky diodes with excellent rectifying behavior, fabricated on n-type Si substrates using a spin-coating process and a reactive-ion etching process. Electrical transport characterizations of these Schottky diodes were investigated by both current-voltage (I-V) and capacitance-voltage (C-V) measurements. We found that these devices exhibit excellent modulation in the current with an on/off ratio of similar to 10(6). Schottky junction solar cells composed of PEDOT:PSS and n-Si structures were also examined. From the current density-voltage (J-V) measurement of a solar cell under illumination, the short circuit current (I-SC), open circuit voltage (V-OC), and conversion efficiency (eta) were similar to 19.7 mA/cm(2), similar to 578.5 mV, and similar to 6.5%, respectively. The simple and low-cost fabrication process of the PEDOT: PSS/n-Si Schottky junctions makes them a promising candidate for further high performance solar cell applications.

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