3-D stacked active layers and vertical gate NAND flash string with single-crystal Si channel by adopting Si/sige selective etch process

Lee, J.-W.; Jeong, M.-K.; Kwon, Hyuck-In; Park, B.-G.; Shin, H.; Lee, J.-H.

doi:10.1109/SNW.2010.5562551

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3-D stacked active layers and vertical gate NAND flash string with single-crystal Si channel by adopting Si/sige selective etch process

Lee, J.-W.;
Jeong, M.-K.;
Kwon, Hyuck-In;
Park, B.-G.;
Shin, H.;
외 1명

Citations

SCOPUS

1

초록

We have proposed new 3-D stacked NAND flash memory structure and investigated key characteristics in various S/D doping concentration, body doping types, body doping concentrations, and stored charge. Thanks to crystalline Si channel, we obtained higher current than that in poly-Si channel. We have shown the interference between adjacent BLs can be removed by using common S-B contact.

키워드

Active Layer; Body doping; Crystalline Si; Doping concentration; Key characteristics; NAND Flash; NAND flash memory; Poly-Si; Selective etch; Si/SiGe; Single-crystal Si; Stored charge; Nanoelectronics; Polysilicon; Three dimensional; Flash memory

제목: 3-D stacked active layers and vertical gate NAND flash string with single-crystal Si channel by adopting Si/sige selective etch process

저자: Lee, J.-W.; Jeong, M.-K.; Kwon, Hyuck-In; Park, B.-G.; Shin, H.; Lee, J.-H.

DOI: 10.1109/SNW.2010.5562551

발행일: 2010-06

유형: Conference Paper

저널명: 2010 Silicon Nanoelectronics Workshop, SNW 2010

언어: ENG

ISSN: P 0000-0000