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Switching and Conduction Mechanism of Cu/Si3N4/Si RRAM with CMOS Compatibility
- Kim, Sungjun;
- Jung, Sunghun;
- Kim, Min-Hwi;
- Cho, Seongjae;
- Lee, Jong-Ho;
- 외 1명
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2초록
In this work, we fabricated CMOS compatible Cu/Si3N4/Si RRAM, showing good resistive switching. This memory cell is stable for bipolar switching (BS) than unipolar switching (US). Trap-controlled space charge limited current (SCLC) conduction is observed. Low resistance state (LRS) shows semiconducting behavior according to the temperature dependency.
- 제목
- Switching and Conduction Mechanism of Cu/Si3N4/Si RRAM with CMOS Compatibility
- 저자
- Kim, Sungjun; Jung, Sunghun; Kim, Min-Hwi; Cho, Seongjae; Lee, Jong-Ho; Park, Byung-Gook
- 발행일
- 2014
- 유형
- Proceedings Paper
- 저널명
- 2014 IEEE SILICON NANOELECTRONICS WORKSHOP (SNW)
- 언어
- ENG
- 출판사
- IEEE
- 발행국가
- 미국
- ISSN
- P 2161-4636