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Resistance switching in electroformed Pt/FeOx/Pt structures
- Lee, S.B.;
- Chae, S.C.;
- Chang, S.H.;
- Liu, C.;
- Jung, C.U.;
- 외 2명
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24초록
We report studies of resistance switching characteristics of Pt/FeOx/Pt structures, of which FeOx thin films were formed by thermal oxidation of Fe layers. X-ray diffraction (XRD) studies showed that less oxidized Fe3O4 phase disappeared and alpha-Fe2O3 phase was formed at annealing temperatures >= 400 degrees C. The electroforming process, usually occurring at 7 similar to 10 V, increased the conductivity of the structure significantly(> 10(2)) and brought About reversible resistance switching under unipolar bias voltage. We successfully demonstrated that the FeO, films exhibited reliable memory switching behaviors.
키워드
resistance switching; iron oxides; electroforming; POLYCRYSTALLINE NIO FILMS; TIO2 THIN-FILMS; OXIDE FILMS; DEPOSITION
- 제목
- Resistance switching in electroformed Pt/FeOx/Pt structures
- 저자
- Lee, S.B.; Chae, S.C.; Chang, S.H.; Liu, C.; Jung, C.U.; Seo, S.; Kim, D.-W.
- 발행일
- 2007-10
- 유형
- Article; Proceedings Paper
- 권
- 51
- 호
- SUPPL. 2
- 페이지
- S96 ~ S99
- 언어
- ENG
- 출판사
- 한국물리학회
- 발행국가
- 대한민국
- ISSN
- E 1976-8524
P 0374-4884