The effect of growth temperature on physical properties of heavily doped ZnO:Al films

  • Hong, Jongin; 
  • Paik, Hanjong; 
  • Hwang, Hosung; 
  • Lee, Sunghwan; 
  • deMello, Andrew J.; 
  • 외 1명
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초록

Heavily-doped ZnO Al film have been deposited on high temperature stable glass substrates using radio-frequency (RF) magnetron sputtering. The effect of growth temperature on physical properties of the films has been investigated. The microstructure evolved a columnar structure into a granular one with the increase in growth temperature and then a typical honeycomb type microstructure representing huge grain formation indicating high densification. All Al-doped ZnO films exhibited high optical transparency and the absorption edge shifted to the short wavelength (blue-shift) as the growth temperature increased. The dense microstructure with a high crystallographic quality and large grains evolved at 500 degrees C enabled us to obtain 2.28 x 10(-3) Omega cm and high visible transmittance over 90% even if the ZnO film was doped with an Al content of approximately 5.5 at%. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

키워드

TRANSPARENT CONDUCTING OXIDES; THIN-FILMS; SEMICONDUCTORS
제목
The effect of growth temperature on physical properties of heavily doped ZnO:Al films
저자
Hong, Jongin; Paik, Hanjong; Hwang, Hosung; Lee, Sunghwan; deMello, Andrew J.; No, Kwangsoo
DOI
10.1002/pssa.200824291
발행일
2009-04
유형
Article
저널명
physica status solidi (a) - applications and materials science
권
206
호
4
페이지
697 ~ 703