Compact Current Modeling of Fully Depleted Symmetric Double-Gate Metal-Oxide-Semiconductor Field Effect Transistors with Doped Short-Channel

초록

The current behaviors of fully depleted (FD) symmetric double-gate (DG) metal-oxide-semiconductor) field effect transistors (MOSFETs) with doped short-channel were parametrically modeled with the simple closed-form in all operational regions. In the diffusion current model, a physical parameter D-G as a function of gate bias (V-GS), drain bias (V-DS), silicon body width (W-B). channel length (L). and channel doping concentration (N-b) was introduced to consider the V-GS dependence. Also, the Subthreshold slope (SS) of DG MOSFET, with doped channel was modeled accurately with D-G. D-D which is dependent on V-DS was introduced to consider the drain-induced barrier lowering (DIBL) in the diffusion current model. After the strong, inversion. the drift Current of doped DG MOSFETs was modeled by considering inversion-layer capacitance based oil charge-sheet approximation. The channel length Modulation by V-DS was considered for accuracy in the current modeling of DG MOSFETs with doped short-channel. Our simple compact models predicted accurately DC characteristics of the devices with the channel length to 20 nm and shown good agreement with two-dimensional (2D) simulation.

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