5 nm 급 반도체 배선 공정 기술 개발

Development of Interconnect Process Technology for 5 nm Technology Nodes

초록

The semiconductor industry has been developed mainly by micronization process due to many advantages of miniaturization of devices. Mass production of semiconductors of 10 nm class has been started recently, and it is expected that the technology generation of 5 nm & 7 nm technology will come. However, excessive linewidth reduction affects physical limits and device reliability. To solve these problems, new process technology development and new concept devices are being studied. In this review, we introduce the next generation technology and introduce the advanced research for the new concept device.

키워드

5 nm & 7 nm technology; 3D integration; carbon semiconductor; air gap; Extreme ultraviolet
제목
5 nm 급 반도체 배선 공정 기술 개발
제목 (타언어)
Development of Interconnect Process Technology for 5 nm Technology Nodes
저자
최은미; 표성규
발행일
2016
저널명
마이크로전자 및 패키징학회지
권
23
호
4
페이지
25 ~ 29